The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction. thickness of a Ge b... https://safeersappliancers.shop/product-category/chrome-lpg-convertible-kenwood-ck307g-90-cm-dual-fuel-range-cooker-black/