S.A. Kukushkin Et al. 50,51 described their coordinated substitution of atoms procedure for the growth of epitaxial SiC and when compared it to much more regular vapor phase deposition strategies. The authors designed their system based upon the conversion of the best levels of the Si substrate surface into epitaxial https://www.quora.com/profile/Trevor-Flatcher-2/Comparative-analysis-of-silicon-carbide-and-traditional-silicon-materials-Silicon-Carbide-vs-Traditional-Silicon-Mater-1